GaN-based single mirror light emitting diodes
Zellweger, C.; Dorsaz, J.; Carlin, J. F.; Buhlmann, H. J.; Ilegems, M.; Stanley, R. P.
2003

Abstract

We present a study on the dependence of the external Quantum Efficiency (QE) of Light Emitting Diodes (LEDs) on the device properties and p-contact metallisation. The external QE could be doubled by changing the p-type contact from oxidised Ni/Au to non-annealed Ag. The best value for the external QE of an unpackaged device is 13.5% and is obtained when the reflection from the Ag mirror contact is in phase with the QW emission.

Details

Title GaN-based single mirror light emitting diodes
Author(s) Zellweger, C. ; Dorsaz, J. ; Carlin, J. F. ; Buhlmann, H. J. ; Ilegems, M. ; Stanley, R. P.
Published in Compound Semiconductors 2002
Series Institute of Physics Conference Series
Volume 174
Pages 419-422
Conference Twenty-ninth International Symposium on Compound Semiconductors, Lausanne, Switzerland, 7-10 October 2002
Date 2003
Publisher Iop Publishing Ltd
Laboratories LASPE
Record Appears in Scientific production and competences > SB - School of Basic Sciences > IPHYS - Institute of Physics > LASPE - Laboratory of Advanced Semiconductors for Photonics and Electronics
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Published
Record creation date 2010-10-11