Conference paper

GaN-based single mirror light emitting diodes

We present a study on the dependence of the external Quantum Efficiency (QE) of Light Emitting Diodes (LEDs) on the device properties and p-contact metallisation. The external QE could be doubled by changing the p-type contact from oxidised Ni/Au to non-annealed Ag. The best value for the external QE of an unpackaged device is 13.5% and is obtained when the reflection from the Ag mirror contact is in phase with the QW emission.


    • EPFL-CONF-153111

    Record created on 2010-10-11, modified on 2017-05-12


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