GaN-based single mirror light emitting diodes

We present a study on the dependence of the external Quantum Efficiency (QE) of Light Emitting Diodes (LEDs) on the device properties and p-contact metallisation. The external QE could be doubled by changing the p-type contact from oxidised Ni/Au to non-annealed Ag. The best value for the external QE of an unpackaged device is 13.5% and is obtained when the reflection from the Ag mirror contact is in phase with the QW emission.


Published in:
Compound Semiconductors 2002, 174, 419-422
Presented at:
Twenty-ninth International Symposium on Compound Semiconductors, Lausanne, Switzerland, 7-10 October 2002
Year:
2003
Publisher:
Iop Publishing Ltd
Laboratories:




 Record created 2010-10-11, last modified 2018-09-13


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