3 W of 650 nm red emission by frequency doubling of wafer-fused semiconductor disk laser

3 W at genuine red wavelength of 650 nm has been achieved from a semiconductor disk laser by frequency doubling. An InP based active medium was fused with a GaAs/AlGaAs distributed Bragg reflector resulting in an integrated monolithic gain mirror. 6.6 W of output power at the fundamental wavelength of 1.3 mu m represents the best achievement reported to date for this type of lasers. (C) 2010 Optical Society of America


Published in:
Optics Express, 18, 21, 645-650
Year:
2010
Publisher:
Optical Society of America
ISSN:
1094-4087
Keywords:
Laboratories:




 Record created 2010-10-06, last modified 2018-03-17


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