Selective etching of AlInN/GaN heterostructures for MEMS technology

An etching technology for the patterning of suspended GaN structures on lattice matched AlInN sacrificial layers is studied. Selective dry RIE etching of GaN to AlInN is demonstrated, which allows effective pattern transfer without affecting lower layers. On the other hand, wet etching of AlInN in highly concentrated KOH solutions has also been studied. We show that high vertical and lateral etch rates are possible. For a fast and selective etching suitable for MEMS technology, a high density of defects at the surface is required due to their positive influence on the lateral etch rate. (c) 2007 Elsevier B.V. All rights reserved.


Published in:
Microelectronic Engineering, 84, 5-8, 1152-1156
Year:
2007
ISSN:
0167-9317
Keywords:
Laboratories:




 Record created 2010-10-05, last modified 2018-09-13


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