DYNAMICS OF ISLAND FORMATION IN THE GROWTH OF INAS/INP QUANTUM-WELLS

A thin InAs layer grown in a quasi-two-dimensional film over InP reorganizes into islands if left to anneal under arsine. This surface transformation is inhibited at lower arsine fluxes. With increasing temperature, the surface transformation is activated as long as the effective arsine coverage is sufficient.


Published in:
Journal of Crystal Growth, 136, 1-4, 278-281
Year:
1994
ISSN:
0022-0248
Keywords:
Laboratories:




 Record created 2010-10-05, last modified 2018-12-03


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