000152891 001__ 152891
000152891 005__ 20181203022032.0
000152891 0247_ $$2doi$$a10.1016/0022-0248(91)91045-C
000152891 022__ $$a0022-0248
000152891 037__ $$aARTICLE
000152891 245__ $$aLUMINESCENCE AND TRANSPORT-PROPERTIES OF HIGH-QUALITY INP GROWN BY CBE BETWEEN 450-DEGREES-C AND 550-DEGREES-C
000152891 260__ $$c1991
000152891 269__ $$a1991
000152891 336__ $$aJournal Articles
000152891 520__ $$aA Hall mobility as high as 153,800 cm2 V-1 s-1 at 77 K with N(d) - N(a) = 1.5 x 10(14) cm-3 has been obtained by adjusting the growth temperature and the phosphine cracking temperature. The 4 K photoluminescence spectra show finely resolved excitonic transitions for layers grown above 535-degrees-C with linewidths as narrow as 0.07 meV. The use of substrates misoriented 2-degrees and 3.5-degrees towards (111)A significantly improves the morphology at the cost of a slight increase in the impurity incorporation.
000152891 6531_ $$aMOLECULAR-BEAM EPITAXY
000152891 6531_ $$aCHEMICAL VAPOR-DEPOSITION
000152891 6531_ $$aELECTRON-MOBILITY
000152891 6531_ $$aEXCITONS
000152891 700__ $$aRudra, A.
000152891 700__ $$0240056$$aCarlin, J. F.$$g104706
000152891 700__ $$aProctor, M.
000152891 700__ $$aIlegems, M.
000152891 773__ $$j111$$k1-4$$q589-593$$tJournal of Crystal Growth
000152891 909C0 $$0252312$$pLASPE$$xU10946
000152891 909CO $$ooai:infoscience.tind.io:152891$$pSB$$particle
000152891 937__ $$aEPFL-ARTICLE-152891
000152891 973__ $$aEPFL$$rREVIEWED$$sPUBLISHED
000152891 980__ $$aARTICLE