HIGH-PURITY INP GROWN BY CHEMICAL BEAM EPITAXY

A Hall mobility as high as 176,200 cm2V-1s-1 at 77 K with N(d)-N(a) = 1.3 x 10(14) cm-3 has been obtained by adjusting the substrate and the phosphine cracker temperatures. The 2 K photoluminescence spectra show finely resolved excitonic transitions for layers grown above 535-degrees-C with linewidths of 0.07 meV. Excitonic transitions have been recorded between 2 and 250 K. The free exciton energy position leads to a highly accurate expression of the band gap energy, which extrapolates to E(g) = 1.347 eV at 300 K.


Published in:
Journal of Electronic Materials, 20, 12, 1087-1090
Year:
1991
ISSN:
0361-5235
Keywords:
Laboratories:




 Record created 2010-10-05, last modified 2018-09-13


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