Gate insulation and drain current saturation mechanism in InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors

The authors investigate 2 mu m gate-length InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS HEMTs) with 12 nm thick Al2O3 gate insulation. Compared to the Schottky barrier (SB) HEMT with similar design, the MOS HEMT exhibits a gate leakage reduction by six to ten orders of magnitude. A maximal drain current density (I-DS=0.9 A/mm) and an extrinsic transconductance (g(me)=115 mS/mm) of the MOS HEMT also show improvements despite the threshold voltage shift. An analytical modeling shows that a higher mobility of electrons in the channel of the MOS HEMT and consequently a higher number of electrons attaining the velocity saturation may explain the observed increase in g(me) after the gate insulation. (C) 2007 American Institute of Physics.


Published in:
Applied Physics Letters, 91, 4, 3509
Year:
2007
ISSN:
0003-6951
Keywords:
Laboratories:




 Record created 2010-10-05, last modified 2018-01-28


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