Effect of anodic oxidation on the characteristics of lattice-matched AlInN/GaN heterostructures

The effect of anodic oxidation on the electronic characteristics of lattice-matched AlInN/GaN heterostructures was investigated using field-effect transistor (FET) structures with the gate areas in direct contact with the electrolytes. The gate surface of the FETs was subjected to anodic oxidation in 0.1 M KOH. The oxidized heterostructures were analyzed by electrochemical impedance spectroscopy and by modeling the characteristics of the electrolyte-gate FETs and the energy-band diagram of the heterostructures. This analysis suggested that the anodic treatment induced a bulk oxidation of the AlInN barrier. The Fermi level at the oxidized AlInN surface was shifted deep into the bandgap. The oxidation led to a reduction of the carrier mobility and to partial depletion of the channel.


Published in:
Journal of Electronic Materials, 37, 5, 616-623
Year:
2008
ISSN:
0361-5235
Keywords:
Laboratories:




 Record created 2010-10-05, last modified 2018-09-13


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