Strain-induced interface instability in GaN/AlN multiple quantum wells

It is shown that in GaN/AlN multiple quantum wells (MQWs), strain is a critical parameter for achieving short-wavelength intersubband transitions (ISBTs). This is investigated by comparing GaN/AlN MQWs grown by metal organic vapor phase epitaxy on either AlN or GaN templates. The GaN/AlN interface is found to be unstable when pseudomorphically strained onto GaN, in agreement with theory. This effect deeply affects the quantum well potential profile leading to a strong redshift of the ISBT energies.


Published in:
Applied Physics Letters, 91, 6, 1927
Year:
2007
ISSN:
0003-6951
Keywords:
Laboratories:




 Record created 2010-10-05, last modified 2018-09-13


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