Suppression of leakage currents in GaN-based LEDs induced by reactive-ion etching damages

Forward and reverse leakage currents in GaN/InGaN multi-quantum well light-emitting diodes (LEDs) are caused by reactive-ion etching (RIE) damages during device patterning. A method to recover the damaged surfaces, based on a chemical etch in KOH: ethylene-glycol is described. Leakage currents decrease of more than a factor of 10 and are completely suppressed in most of devices.


Published in:
European Physical Journal-Applied Physics, 43, 1, 51-53
Year:
2008
ISSN:
1286-0042
Keywords:
Laboratories:




 Record created 2010-10-05, last modified 2018-09-13


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