Barrier-layer scaling of InAlN/GaN HEMTs

We discuss the characteristics of In0.17Al0.83N/GaN high-electron mobility transistors with barrier thicknesses between 33 and 3 nm, which are grown on sapphire substrates by metal-organic chemical vapor deposition. The maximum drain current (at V-G = +2.0 V) decreased with decreasing barrier thickness due to the gate forward drive limitation and residual surface-depletion effect. Full pinchoff and low leakage are observed. Even with 3-nm ultrathin barrier, the heterostructure and contacts are thermally highly stable (up to 1000 degrees C).


Published in:
Ieee Electron Device Letters, 29, 5, 422-425
Year:
2008
ISSN:
0741-3106
Keywords:
Laboratories:




 Record created 2010-10-05, last modified 2018-03-17


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