Effect of fluoride plasma treatment on InAlN/GaN HEMTs

Fluoride plasma treatment similar to that used in AlGaN/GaN HEMTs has been applied to InAlN/GaN HEMTs. Enhancement mode of operation is obtained with a pinch-off voltage shifted by 3 V. Owing to the fluoride treatment an increase of the forward gate threshold to 3.5 V is observed. The small-signal performances are essentially unchanged. The thermal stability of this process has been assessed for the first time and appears to be limited to approximately 500 degrees C.


Published in:
Electronics Letters, 44, 11, 696-U52
Year:
2008
ISSN:
0013-5194
Keywords:
Laboratories:




 Record created 2010-10-05, last modified 2018-03-18


Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)