In-situ monitoring of GaN growth by hydride vapor phase epitaxy
In-situ reflectivity measurements of the growth surface during deposition in a Hydride Vapor Phase Epitaxy system are presented. The GaN growth rate increases linearly with the HCl flow and increases monotonically with the ammonia flow. Following the replacement of the carrier gas nitrogen by hydrogen, the growth rate initially increases, passes through a maximum at a H-2 concentration of 0.15 and then decreases.
Record created on 2010-10-05, modified on 2016-08-08