Narrow UV emission from homogeneous GaN/AlGaN quantum wells

The authors report on the achievement of narrow ultraviolet emission using GaN/AlGaN quantum wells grown by metal organic vapor phase epitaxy. The origin of the inhomogeneous broadening of the emission is explained by means of micro-photoluminescence and atomic force microscopy measurements. The effect of the well/barrier interface roughness on the linewidth is found to be marginal, while the impact of Al composition fluctuations of the barriers is highly critical. Emission linewidths as small as 5 meV at 10 K are obtained by decreasing the aluminum concentration fluctuations in the AlGaN barrier. (c) 2007 American Institute of Physics.


Published in:
Applied Physics Letters, 90, 2, 1905
Year:
2007
ISSN:
0003-6951
Keywords:
Laboratories:




 Record created 2010-10-05, last modified 2018-03-17


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