Blue lasing at room temperature in an optically pumped lattice-matched AlInN/GaN VCSEL structure
Laser action with low threshold average pump power density (similar to 50 W. cm(-2)) at room temperature is reported for a crack-free planar vertical cavity surface emitting laser (VCSEL) structure based on a bottom lattice-matched AllnN/GaN distributed Bragg reflector (DBR) and a top dielectric DBR. The cavity region, formed by n- and p-type GaN layers surrounding only three InGaN/GaN quantum wells, corresponds to a typical active region suitable for an electrically driven VCSEL. In addition to low threshold, a spontaneous emission coupling factor beta 2 x 10(-3) is derived for this ready-to-be-processed laser structure.
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Feltin, E., Christmann, G., Dorsaz, J., Castiglia, A., Carlin, J. F., Butte, R., Grandjean, N., Christopoulos, S., von Hogersthal, G. B. H., Grundy, A. J. D., Lagoudakis, P. G., & Baumberg, J. J. (2007). Blue lasing at room temperature in an optically pumped lattice-matched AlInN/GaN VCSEL structure. Electronics Letters, 43(17), 924–926. https://doi.org/10.1049/el:20071226
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WOS:000249282200013
2007
43
17
924
926
REVIEWED
EPFL