GaN grown on (111) single crystal diamond substrate by molecular beam epitaxy

GaN epilayers are grown on (111) oriented single crystal diamond substrate by ammonia-source molecular beam epitaxy. Each step of the growth is monitored in situ by reflection high energy electron diffraction. It is found that a two-dimensional epitaxial wurtzite GaN film is obtained. The surface morphology is smooth: the rms roughness is as low as 1.3 nm for 2 x 2 mu m(2) scan. Photoluminescence measurements reveal pretty good optical properties. The GaN band edge is centred at 3.469 eV with a linewidth of 5 meV. These results demonstrate that GaN heteroepitaxially grown on diamond opens new rooms for high power electronic applications. (C) 2009 Elsevier B.V. All rights reserved.


Published in:
Journal of Crystal Growth, 311, 21, 4539-4542
Year:
2009
ISSN:
0022-0248
Keywords:
Laboratories:




 Record created 2010-10-05, last modified 2018-03-17


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