000152829 001__ 152829
000152829 005__ 20180913060002.0
000152829 0247_ $$2doi$$a10.1063/1.3442486
000152829 022__ $$a0003-6951
000152829 02470 $$2ISI$$a000278404800063
000152829 037__ $$aARTICLE
000152829 245__ $$aCurrent transport and barrier height evaluation in Ni/InAlN/GaN Schottky diodes
000152829 260__ $$c2010
000152829 269__ $$a2010
000152829 336__ $$aJournal Articles
000152829 520__ $$aThe current-voltage characteristics of the Ni/InAlN/GaN Schottky diodes were measured at various temperatures in the range of 300-700 K. The experimental data were analyzed considering different current-transport mechanisms. From the analysis it follows that the tunneling current, which might be due to a multistep tunneling along dislocations, is the dominant component at all temperatures in the samples investigated. The barrier height of the Ni/InAlN/GaN Schottky diodes, evaluated from the thermionic emission current, shows a slightly negative temperature coefficient and its value at 300 K is >= 1.46 eV. This is significantly higher barrier height than reported before (<1 eV). This discrepancy follows from an incorrect evaluation using the intercept and slope of a measured characteristic without separation of the individual current components. (C) 2010 American Institute of Physics. [doi:10.1063/1.3442486]
000152829 6531_ $$aGAN
000152829 700__ $$aDonoval, D.
000152829 700__ $$aChvala, A.
000152829 700__ $$aSramaty, R.
000152829 700__ $$aKovac, J.
000152829 700__ $$0240056$$aCarlin, J. F.$$g104706
000152829 700__ $$0244550$$aGrandjean, N.$$g161577
000152829 700__ $$aPozzovivo, G.
000152829 700__ $$aKuzmik, J.
000152829 700__ $$aPogany, D.
000152829 700__ $$aStrasser, G.
000152829 700__ $$aKordos, P.
000152829 773__ $$j96$$k22$$q3501$$tApplied Physics Letters
000152829 909C0 $$0252312$$pLASPE$$xU10946
000152829 909CO $$ooai:infoscience.tind.io:152829$$pSB$$particle
000152829 937__ $$aEPFL-ARTICLE-152829
000152829 973__ $$aEPFL$$rREVIEWED$$sPUBLISHED
000152829 980__ $$aARTICLE