HIGH-SPEED INP/GAINAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS GROWN BY CHEMICAL BEAM EPITAXY

We report the fabrication and characterization of lateral metal-semiconductor-metal (MSM) photodiodes on an InP substrate. The photoabsorbing layer is made of InGaAs covered by a thin InP Schottky barrier enhancement layer. Schottky contacts for the detectors were formed by the evaporation of Au and patterned using a lift-off technique. The MSM photodiodes exhibit a dark current lower than 200 nA at 15-V bias, an efficient photoresponse up to 1.6 mum, and a fast deconvoluted full width at half maximum response of about 25 ps at 12-V bias.


Published in:
Applied Physics Letters, 65, 2, 228-230
Year:
1994
ISSN:
0003-6951
Keywords:
Laboratories:




 Record created 2010-10-05, last modified 2018-09-13


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