Loading...
research article
Blue laser diodes including lattice-matched Al0.83In0.17N bottom cladding layer
2008
A report is presented on InGaN/GaN multiple quantum well laser diodes, grown by metal organic vapour phase epitaxy on c-plane sapphire substrates, including an Al0.83In0.17N cladding layer lattice-matched to GaN. Lasing action is demonstrated for gain-guided devices at room temperature under pulsed current injection conditions. Direct comparison with structures including only a standard Al0.07Ga0.93N bottom cladding shows an improved optical confinement. This is exemplified by a decreased threshold current density.
Type
research article
Web of Science ID
WOS:000255414900012
Authors
•
Feltin, E.
•
•
•
•
•
Publication date
2008
Published in
Volume
44
Issue
8
Start page
521
End page
522
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
October 5, 2010
Use this identifier to reference this record