Al0.83In0.17N lattice-matched to GaN used as an optical blocking layer in GaN-based edge emitting lasers
Castiglia, A.; Feltin, E.; Cosendey, G.; Altoukhov, A.; Carlin, J. F.; Butte, R.; Grandjean, N.
2009

Abstract

Nitride-based blue laser diode structures with either Al0.83In0.17N/Al0.07Ga0.93N or Al0.87In0.13N bottom claddings have been fabricated and compared to standard structures including solely Al0.07Ga0.93N bottom claddings. Lasing emission at 415 nm is achieved in gain-guided structures at room temperature under pulsed current injection. Devices including the Al0.83In0.17N/Al0.07Ga0.93N bottom cladding exhibit superior device performance. This is a consequence of a better optical mode confinement, as expected from modeling.

Details

Title Al0.83In0.17N lattice-matched to GaN used as an optical blocking layer in GaN-based edge emitting lasers
Author(s) Castiglia, A. ; Feltin, E. ; Cosendey, G. ; Altoukhov, A. ; Carlin, J. F. ; Butte, R. ; Grandjean, N.
Published in Applied Physics Letters
Volume 94
Issue 19
Pages 3506
Date 2009
ISSN 0003-6951
Keywords
DOI https://doi.org/10.1063/1.3138136
Other identifier(s) View record in Web of Science
Laboratories LASPE
Record Appears in Scientific production and competences > SB - School of Basic Sciences > IPHYS - Institute of Physics > LASPE - Laboratory of Advanced Semiconductors for Photonics and Electronics
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Record creation date 2010-10-05

Actions