Progresses in III-nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials

We propose to use lattice-matched AlInN/GaN to replace the Al(Ga)N/GaN material system for III-nitride Bragg reflectors, despite the poor material quality of AlInN reported until very recently. We report an improvement of AlInN material that allowed for successful fabrication of a microcavity light emitting diode, a distributed Bragg reflector with 99.4% reflectivity and microcavities with a quality factor over 800. These results establish state-of-the-art values for III-nitrides, and announce the future importance of AlInN in GaN-based optoelectronics. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.


Published in:
Physica Status Solidi B-Basic Solid State Physics, 242, 11, 2326-2344
Year:
2005
ISSN:
0370-1972
Keywords:
Laboratories:




 Record created 2010-10-05, last modified 2018-03-17


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