Pseudomorphic InGaAs/In(Ga)P bidimensional electron gas grown by chemical beam epitaxy

Growth temperatures between 450 and 520 degrees C and V/III ratios of 2-8 were explored to optimize the crystalline quality and the transport properties of compressively strained InxGa1-xAs/InP heterostructures (0.53 < x < 1). 77 K Hall mobilities as high as 118000 cm(2) V-1 s(-1) with n(s) = 1.4 x 10(12) cm(-2) were measured on structures incorporating an In0.8Ga0.2As channel grown with optimized conditions.


Published in:
Journal of Crystal Growth, 164, 1-4, 470-475
Year:
1996
ISSN:
0022-0248
Keywords:
Laboratories:




 Record created 2010-10-05, last modified 2018-03-17


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