High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN

We report on the growth by metalorganic vapor phase epitaxy of high-quality Al1-xInxN layers and AlInN/GaN Bragg mirrors near lattice matched to GaN. Layers are grown on a GaN buffer layer with no cracks over full 2 in. sapphire wafers. The index contrast relative to GaN is around 7% for wavelengths ranging from 950 to 450 nm. We demonstrate the growth of a crack-free, 20 pairs Al0.84In0.16N/GaN distributed Bragg reflector centered at 515 nm with an over 90% reflectivity and a 35 nm stop band. The growth of high quality AlInN lattice matched to GaN may represent a breakthrough in GaN-based optoelectronics which is presently limited by the lack of a high-index-contrast and high-band gap lattice-matched material. (C) 2003 American Institute of Physics.


Published in:
Applied Physics Letters, 83, 4, 668-670
Year:
2003
ISSN:
0003-6951
Keywords:
Laboratories:




 Record created 2010-10-05, last modified 2018-03-17


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