AlGaN/GaN HEMT on (111) single crystalline diamond
Alomari, M.; Dussaigne, A.; Martin, D.; Grandjean, N.; Gaquiere, C.; Kohn, E.
2010

Abstract

AlGaN/GaN HEMTs have been fabricated directly on (111) oriented single crystal diamond with 1.3 x 10(13) cm(-2) channel sheet charge density and 731 cm(2)/Vs mobility. 0.2 mu m gate length devices showed 0.73 A/mm maximum drain current density and f(T) and f(max) cutoff frequencies of 21 and 42 GHz.

Details

Title AlGaN/GaN HEMT on (111) single crystalline diamond
Author(s) Alomari, M. ; Dussaigne, A. ; Martin, D. ; Grandjean, N. ; Gaquiere, C. ; Kohn, E.
Published in Electronics Letters
Volume 46
Issue 4
Pages 299-300
Date 2010
ISSN 0013-5194
DOI https://doi.org/10.1049/el.2010.2937
Other identifier(s) View record in Web of Science
Laboratories LASPE
Record Appears in Scientific production and competences > SB - School of Basic Sciences > IPHYS - Institute of Physics > LASPE - Laboratory of Advanced Semiconductors for Photonics and Electronics
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Record creation date 2010-10-05

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