AlGaN/GaN HEMT on (111) single crystalline diamond
2010
Abstract
AlGaN/GaN HEMTs have been fabricated directly on (111) oriented single crystal diamond with 1.3 x 10(13) cm(-2) channel sheet charge density and 731 cm(2)/Vs mobility. 0.2 mu m gate length devices showed 0.73 A/mm maximum drain current density and f(T) and f(max) cutoff frequencies of 21 and 42 GHz.
Details
Title
AlGaN/GaN HEMT on (111) single crystalline diamond
Author(s)
Alomari, M. ; Dussaigne, A. ; Martin, D. ; Grandjean, N. ; Gaquiere, C. ; Kohn, E.
Published in
Electronics Letters
Volume
46
Issue
4
Pages
299-300
Date
2010
ISSN
0013-5194
Other identifier(s)
View record in Web of Science
Laboratories
LASPE
Record Appears in
Scientific production and competences > SB - School of Basic Sciences > IPHYS - Institute of Physics > LASPE - Laboratory of Advanced Semiconductors for Photonics and Electronics
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Record creation date
2010-10-05