AlGaN/GaN HEMT on (111) single crystalline diamond

AlGaN/GaN HEMTs have been fabricated directly on (111) oriented single crystal diamond with 1.3 x 10(13) cm(-2) channel sheet charge density and 731 cm(2)/Vs mobility. 0.2 mu m gate length devices showed 0.73 A/mm maximum drain current density and f(T) and f(max) cutoff frequencies of 21 and 42 GHz.


Published in:
Electronics Letters, 46, 4, 299-300
Year:
2010
ISSN:
0013-5194
Laboratories:




 Record created 2010-10-05, last modified 2018-03-17


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