Current collapse reduction in InAlN/GaN MOS HEMTs by in situ surface pre-treatment and atomic layer deposition of ZrO2 high-k gate dielectrics

Atomic layer deposition (ALD) is supplied to grow ZrO2 high-k gate dielectrics and fabricate InAlN/GaN metal oxide semiconductor (MOS) high electron mobility transistors (HEMTs). Ex situ chemical surface cleaning and optimised in situ InAlN surface pre-treatment by ALD lead to a substantial suppression of drain-source current collapse owing to a high-quality InAlN/oxide interface. In addition, the gate leakage current was suppressed by about three orders of magnitude.


Published in:
Electronics Letters, 45, 11, 570-571
Year:
2009
ISSN:
0013-5194
Keywords:
Laboratories:




 Record created 2010-10-05, last modified 2018-01-28


Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)