Two-dimensional "pseudo-donor-acceptor-pairs" model of recombination dynamics in InGaN/GaN quantum wells
2003
Abstract
Recombination dynamics in InGaN/GaN quantum wells has been studied by time resolved photoluminescence (PL). The radiative recombination processes in these systems can be qualitatively explained on a nanometer-scale by a model based on the recombination dynamics of two dimensional "pseudo-donor-acceptor pairs". (C) 2002 Elsevier Science B.V. All rights reserved.
Details
Title
Two-dimensional "pseudo-donor-acceptor-pairs" model of recombination dynamics in InGaN/GaN quantum wells
Author(s)
Morel, A. ; Lefebvre, P. ; Taliercio, T. ; Bretagnon, T. ; Gil, B. ; Grandjean, N. ; Damilano, B. ; Massies, J.
Published in
Physica E-Low-Dimensional Systems & Nanostructures
Volume
17
Issue
1-4
Pages
64-67
Date
2003
ISSN
1386-9477
Laboratories
LASPE
Record Appears in
Scientific production and competences > SB - School of Basic Sciences > IPHYS - Institute of Physics > LASPE - Laboratory of Advanced Semiconductors for Photonics and Electronics
Peer-reviewed publications
Work outside EPFL
Journal Articles
Published
Peer-reviewed publications
Work outside EPFL
Journal Articles
Published
Record creation date
2010-10-05