MBE growth of AlGaN/GaN HEMTS on resistive Si(111) substrate with RF small signal and power performances

In this paper, we report on the properties of GaN films and AlGaN/GaN HEMT structures grown by molecular beam epitaxy on resistive Si(1 1 1) substrates. The properties of the GaN buffer layer and the AlGaN/GaN HEMTs are presented. Finally, both static and high-frequency performances of sub-micron gate length devices are analyzed demonstrating their RF power capability. (C) 2002 Elsevier Science B.V. All rights reserved.


Published in:
Journal of Crystal Growth, 251, 1-4, 811-815
Year:
2003
ISSN:
0022-0248
Keywords:
Laboratories:




 Record created 2010-10-05, last modified 2018-03-17


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