Exciton oscillator strength in GaN/AlGaN quantum wells
Zamfirescu, M.; Gil, B.; Grandjean, N.; Malpuech, G.; Kavokin, A.; Bigenwald, P.; Massies, J.
2002

Abstract

We have found experimentally that the exciton oscillator strength decreases dramatically with increase of the QW width in a GaN/Al0.07Ga0.93N system. The collapse of the oscillator strength is a manifestation of the polarisation field effect, as confirmed by our variational calculation. We find that only excitons in very thin quantum wells have an oscillator strength exceeding that of the exciton in bulk GaN.

Details

Title Exciton oscillator strength in GaN/AlGaN quantum wells
Author(s) Zamfirescu, M. ; Gil, B. ; Grandjean, N. ; Malpuech, G. ; Kavokin, A. ; Bigenwald, P. ; Massies, J.
Published in Physica Status Solidi a-Applications and Materials Science
Volume 190
Issue 1
Pages 129-133
Date 2002
ISSN 0031-8965
Keywords
DOI https://doi.org/10.1002/1521-396X(200203)190:1<129::AID-PSSA129>3.0.CO;2-Q
Laboratories LASPE
Record Appears in Scientific production and competences > SB - School of Basic Sciences > IPHYS - Institute of Physics > LASPE - Laboratory of Advanced Semiconductors for Photonics and Electronics
Peer-reviewed publications
Work outside EPFL
Journal Articles
Published
Record creation date 2010-10-05

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