Field distribution and collection efficiency in an AlGaN metal-semiconductor-metal detector

Metal-semiconductor-metal detectors have been fabricated based on AlGaN grown on Si by molecular beam epitaxy. Field distribution and collection efficiency were studied with the ion beam induced charge collection method. The results were explained by numerical two-dimensional calculations of the electric field distribution. The calculated field map and charge buildup at the electrodes are used to explain the bias and position dependence of the ion beam induced charge collection. The similarities and differences with the case of optical detection are discussed. (C) 2002 American Institute of Physics.


Published in:
Journal of Applied Physics, 91, 9, 6095-6098
Year:
2002
ISSN:
0021-8979
Keywords:
Laboratories:




 Record created 2010-10-05, last modified 2018-03-17


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