Cw and time-resolved spectroscopy in homoepitaxial GaN films and GaN-GaAlN quantum wells grown by molecular beam epitaxy
2001
Abstract
We have grown GaN films and GaN-AlGaN quantum wells (QWs) on homoepitaxial substrates, by molecular beam epitaxy using ammonia. Both the GaN film and the QW are found to have superior excitonic recombination properties which are extremely promising for the development of indium free ultra-violet lasers based on nitrides. (C) 2001 Published by Elsevier Science Ltd.
Details
Title
Cw and time-resolved spectroscopy in homoepitaxial GaN films and GaN-GaAlN quantum wells grown by molecular beam epitaxy
Author(s)
Taliercio, T. ; Gallart, M. ; Lefebvre, P. ; Morel, A. ; Gil, B. ; Allegre, J. ; Grandjean, N. ; Massies, J. ; Grzegory, I. ; Porowski, S.
Published in
Solid State Communications
Volume
117
Issue
7
Pages
445-448
Date
2001
ISSN
0038-1098
Keywords
Laboratories
LASPE
Record Appears in
Scientific production and competences > SB - School of Basic Sciences > IPHYS - Institute of Physics > LASPE - Laboratory of Advanced Semiconductors for Photonics and Electronics
Peer-reviewed publications
Work outside EPFL
Journal Articles
Published
Peer-reviewed publications
Work outside EPFL
Journal Articles
Published
Record creation date
2010-10-05