Cw and time-resolved spectroscopy in homoepitaxial GaN films and GaN-GaAlN quantum wells grown by molecular beam epitaxy
Taliercio, T.; Gallart, M.; Lefebvre, P.; Morel, A.; Gil, B.; Allegre, J.; Grandjean, N.; Massies, J.; Grzegory, I.; Porowski, S.
2001

Abstract

We have grown GaN films and GaN-AlGaN quantum wells (QWs) on homoepitaxial substrates, by molecular beam epitaxy using ammonia. Both the GaN film and the QW are found to have superior excitonic recombination properties which are extremely promising for the development of indium free ultra-violet lasers based on nitrides. (C) 2001 Published by Elsevier Science Ltd.

Details

Title Cw and time-resolved spectroscopy in homoepitaxial GaN films and GaN-GaAlN quantum wells grown by molecular beam epitaxy
Author(s) Taliercio, T. ; Gallart, M. ; Lefebvre, P. ; Morel, A. ; Gil, B. ; Allegre, J. ; Grandjean, N. ; Massies, J. ; Grzegory, I. ; Porowski, S.
Published in Solid State Communications
Volume 117
Issue 7
Pages 445-448
Date 2001
ISSN 0038-1098
Keywords
DOI https://doi.org/10.1016/S0038-1098(00)00475-0
Laboratories LASPE
Record Appears in Scientific production and competences > SB - School of Basic Sciences > IPHYS - Institute of Physics > LASPE - Laboratory of Advanced Semiconductors for Photonics and Electronics
Peer-reviewed publications
Work outside EPFL
Journal Articles
Published
Record creation date 2010-10-05

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