000152704 001__ 152704
000152704 005__ 20180317094840.0
000152704 0247_ $$2doi$$a10.1002/1521-396X(200111)188:1<171::AID-PSSA171>3.0.CO;2-X
000152704 022__ $$a0031-8965
000152704 037__ $$aARTICLE
000152704 245__ $$aNuclear microprobe analysis of GaN based light emitting diodes
000152704 269__ $$a2001
000152704 260__ $$c2001
000152704 336__ $$aJournal Articles
000152704 520__ $$aThe aim of this work is to describe the structure and the composition of light emitting diode (LED) chips from Rutherford Backscattering Spectroscopy and Particle Induced X-ray Emission measurements performed with a 2 MeV He-4(+) micro-beam focused down to a 1 mum(2) spot size, We also investigated charge transport properties of GaN based LEDs by means of Ion Beam Induced Charge Collection. The spatial distribution of the charge collection in the chip is determined using a micro-beam with a low flux of less than 400 ions per second. The interaction of the incident ions induces the creation of electron-hole (e-h) pairs within the structure of the LED. The created charges are collected by the application of a reverse bias voltage. Since the technique allows an accurate localization of e-h pair creation sites, with a spatial resolution better than 1 mum(2), the obtained maps provide details on the structural heterogeneity of the p-n junction and on the structural quality of the LEDs.
000152704 6531_ $$aINDUCED CHARGE COLLECTION
000152704 700__ $$aHirsch, L.
000152704 700__ $$aBarriere, A. S.
000152704 700__ $$aMoretto, P.
000152704 700__ $$aDamilano, B.
000152704 700__ $$0244550$$aGrandjean, N.$$g161577
000152704 700__ $$aMassies, J.
000152704 700__ $$aDuboz, J. Y.
000152704 773__ $$j188$$k1$$q171-174$$tPhysica Status Solidi a-Applied Research
000152704 909CO $$ooai:infoscience.tind.io:152704$$particle$$pSB
000152704 909C0 $$0252312$$pLASPE$$xU10946
000152704 937__ $$aEPFL-ARTICLE-152704
000152704 973__ $$aOTHER$$rREVIEWED$$sPUBLISHED
000152704 980__ $$aARTICLE