Inelastic light scattering by phonons in hexagonal GaN-AlN nanostructures

Two selected examples have been chosen to illustrate the ability of non-resonant Raman scattering to probe phonons in hexagonal GaN-AlN artificial structures. The angular dispersion of polar phonons is investigated in a long period GaN-AlN superlattice and compared with the results of calculations based on a dielectric continuum model. On the other hand, the Raman signature of the self-assembled GaN quantum dots and of the ALN spacers of a multi-layered struct;re is used to determine the strain field in the stucture. The dots are shown to be fully strained on the ALN lattice parameter while the spacers exhibit on the average a slight tensile strain.


Published in:
Physica Status Solidi a-Applied Research, 183, 1, 157-161
Year:
2001
ISSN:
0031-8965
Keywords:
Laboratories:




 Record created 2010-10-05, last modified 2018-03-17


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