High performance solar blind detectors based on AlGaN grown by MBE on Si
Duboz, J. Y.; Reverchon, J. L.; Adam, D.; Damilano, B.; Semond, F.; Grandjean, N.; Massies, J.
2001

Abstract

Solar blind metal-semiconductor-metal detectors have been fabricated based on AlGaN grown on Si by molecular beam epitaxy. Some devices were fabricated by electron beam lithography, We present the device characterization and performance, that includes a noise equivalent power as low as 30 fW at 280 nm.

Details

Title High performance solar blind detectors based on AlGaN grown by MBE on Si
Author(s) Duboz, J. Y. ; Reverchon, J. L. ; Adam, D. ; Damilano, B. ; Semond, F. ; Grandjean, N. ; Massies, J.
Published in Physica Status Solidi a-Applied Research
Volume 188
Issue 1
Pages 325-328
Date 2001
ISSN 0031-8965
DOI https://doi.org/10.1002/1521-396X(200111)188:1<325::AID-PSSA325>3.0.CO;2-T
Laboratories LASPE
Record Appears in Scientific production and competences > SB - School of Basic Sciences > IPHYS - Institute of Physics > LASPE - Laboratory of Advanced Semiconductors for Photonics and Electronics
Peer-reviewed publications
Work outside EPFL
Journal Articles
Published
Record creation date 2010-10-05

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