High performance solar blind detectors based on AlGaN grown by MBE on Si

Solar blind metal-semiconductor-metal detectors have been fabricated based on AlGaN grown on Si by molecular beam epitaxy. Some devices were fabricated by electron beam lithography, We present the device characterization and performance, that includes a noise equivalent power as low as 30 fW at 280 nm.


Published in:
Physica Status Solidi a-Applied Research, 188, 1, 325-328
Year:
2001
ISSN:
0031-8965
Laboratories:




 Record created 2010-10-05, last modified 2018-09-13


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