Dielectric microcavity in GaN/Si
Duboz, J. Y.; Dua, L.; Glastre, G.; Legagneux, P.; Massies, J.; Semond, F.; Grandjean, N.
2001

Abstract

We have demonstrated an original approach for fabricating microcavities in GaN grown on Si. Holes are etched in the Si substrate and highly reflective dielectric mirrors are deposited on both front and back sides. The cavity has been optically characterized and the results validate our approach.

Details

Title Dielectric microcavity in GaN/Si
Author(s) Duboz, J. Y. ; Dua, L. ; Glastre, G. ; Legagneux, P. ; Massies, J. ; Semond, F. ; Grandjean, N.
Published in Physica Status Solidi a-Applied Research
Volume 183
Issue 1
Pages 35-39
Date 2001
ISSN 0031-8965
Keywords
DOI https://doi.org/10.1002/1521-396X(200101)183:1<35::AID-PSSA35>3.0.CO;2-9
Laboratories LASPE
Record Appears in Scientific production and competences > SB - School of Basic Sciences > IPHYS - Institute of Physics > LASPE - Laboratory of Advanced Semiconductors for Photonics and Electronics
Peer-reviewed publications
Work outside EPFL
Journal Articles
Published
Record creation date 2010-10-05