Optoelectronic characterization of blue InGaN/GaN LEDS grown by MBE

Light emitting diodes were grown by molecular beam epitaxy using NH, as nitrogen precursor. The active layer is composed by a single plane of undoped InGaN layer with about 15% of In. The structure was buried by 2700 Angstrom of Mg-doped GaN (p = 1 x 10(17) cm(-3)). The turn on voltage is at 4.5 V and the operating voltage is 6.1 V at 20 mA. Temperature dependent I(V) characteristics reveal the predominance of tunneling injection current. We measure room temperature electroluminescence in the blue from 440 to 490 nm with a narrow full width at half maximum. (C) 2001 Elsevier Science B.V. All rights reserved.


Published in:
Materials Science and Engineering B-Solid State Materials for Advanced Technology, 82, 1-3, 256-258
Year:
2001
ISSN:
0921-5107
Keywords:
Laboratories:




 Record created 2010-10-05, last modified 2018-03-17


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