Temperature dependence of optical properties of h-GaN films studied by reflectivity and ellipsometry

Spectroscopic ellipsometry (SE) carried out at 300 K together with reflectivity measurements performed from 5 to 300 K are used to determine the temperature dependence of the refractive index of hexagonal GaN films between 360 and 600 nm. The refractive index is well described with a Sellmeier dispersion law and its variation with temperature is given. Below the band gap, the three excitonic features (labelled A, B and C) appearing in the reflectivity spectra are analysed within a multi-polariton model which includes the spatial dispersion. The transition energy, broadening parameter and oscillator strength are derived. The temperature dependence of A and B broadening parameters is analysed.


Published in:
Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, 39, 1, 20-25
Year:
2000
ISSN:
0021-4922
Keywords:
Laboratories:




 Record created 2010-10-05, last modified 2018-03-17


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