000152675 001__ 152675
000152675 005__ 20180913055959.0
000152675 0247_ $$2doi$$a10.1016/S0040-6090(99)00908-6
000152675 022__ $$a0040-6090
000152675 037__ $$aARTICLE
000152675 245__ $$aResonant Raman scattering in (Al,Ga)N/GaN quantum well structures
000152675 269__ $$a2000
000152675 260__ $$c2000
000152675 336__ $$aJournal Articles
000152675 520__ $$aWe report on Raman scattering in hexagonal GaN quantum wells embedded in Al0.11Ga0.89N barriers, The six monolayers thick quantum wells, grown by molecular beam epitaxy, are deposited on a GaN buffer layer. Resonant enhancement of the Raman lines associated with the A(1)(LO) phonon of GaN has been achieved using excitation lines in the 3.5-3.8 eV range, which allows selective probing of the wells, the barriers and the buffer layer. Strong A(1)(LO) multiphonon scattering is observed for incident or scattered photon energy in resonance with the lowest electronic transitions in the quantum wells. (C) 2000 Published by Elsevier Science S.A.
000152675 6531_ $$aGaN
000152675 6531_ $$aAlGaN
000152675 6531_ $$aquantum wells
000152675 6531_ $$aRaman
000152675 6531_ $$aphonons
000152675 6531_ $$aresonance
000152675 6531_ $$aGAN
000152675 700__ $$aGleize, J.
000152675 700__ $$aDemangeot, F.
000152675 700__ $$aFrandon, J.
000152675 700__ $$aRenucci, M. A.
000152675 700__ $$aKuball, M.
000152675 700__ $$0244550$$aGrandjean, N.$$g161577
000152675 700__ $$aMassies, J.
000152675 773__ $$j364$$k1-2$$q156-160$$tThin Solid Films
000152675 909C0 $$0252312$$pLASPE$$xU10946
000152675 909CO $$ooai:infoscience.tind.io:152675$$pSB$$particle
000152675 937__ $$aEPFL-ARTICLE-152675
000152675 973__ $$aOTHER$$rREVIEWED$$sPUBLISHED
000152675 980__ $$aARTICLE