Resonant Raman scattering in (Al,Ga)N/GaN quantum well structures

We report on Raman scattering in hexagonal GaN quantum wells embedded in Al0.11Ga0.89N barriers, The six monolayers thick quantum wells, grown by molecular beam epitaxy, are deposited on a GaN buffer layer. Resonant enhancement of the Raman lines associated with the A(1)(LO) phonon of GaN has been achieved using excitation lines in the 3.5-3.8 eV range, which allows selective probing of the wells, the barriers and the buffer layer. Strong A(1)(LO) multiphonon scattering is observed for incident or scattered photon energy in resonance with the lowest electronic transitions in the quantum wells. (C) 2000 Published by Elsevier Science S.A.


Published in:
Thin Solid Films, 364, 1-2, 156-160
Year:
2000
ISSN:
0040-6090
Keywords:
Laboratories:




 Record created 2010-10-05, last modified 2018-03-17


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