InGaN/GaN heterostructure samples were grown by molecular beam epitaxy using ammonia as a nitrogen precursor. The growth of InGaN/GaN self-assembled quantum dots was monitored in situ by reflection high energy electron diffraction intensity oscillations. Atomic force microscopy scans showed a very high density of InGaN islands, similar to 1x10(11) cm(-2), well above the dislocation density. This could explain the increased radiative efficiency of these samples compared to homogeneous quantum wells. Light emitting diodes (LEDs) with InGaN active layers buried in GaN were realized. Electroluminescence and photocurrent spectra of these LEDs evidence a strong Stokes shift that can be attributed to high localization of carriers in InGaN layers. (C) 2000 Elsevier Science B.V. All rights reserved.