Photoreflectance investigations of the bowing parameter in AlGaN alloys lattice-matched to GaN

Room temperature photoreflectance investigations have been performed on a series of AlGaN layers grown both by metalorganic vapor phase epitaxy and molecular beam epitaxy on c-plane sapphire substrates. The aluminum composition was ranging between 0% and 20%, and was determined independently in the different growth laboratories, by various methods. It is found that within the experimental uncertainty, there is no detectable bowing parameter in these alloys. This contradicts some previous experimental investigations and confirms other ones. (C) 1999 American Institute of Physics. [S0003-6951(99)01122-5].


Published in:
Applied Physics Letters, 74, 22, 3353-3355
Year:
1999
ISSN:
0003-6951
Keywords:
Laboratories:




 Record created 2010-10-05, last modified 2018-03-17


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