Very low densities of localized states at the Fermi level in hydrogenated polymorphous silicon from capacitance and space-charge-limited current measurements

The density of states at the Fermi level N(E-F) has been measured on hydrogenated polymorphous (pm-Si:H) silicon samples using both capacitance measurements on Schottky barriers and space-charge-limited current measurements on n(+)/i/n(+) structures. From both techniques, N(E-F) values of 7-8 x 10(14) cm(-3) eV(-1) have been obtained, which is significantly lower than reported in the literature for hydrogenated amorphous silicon (a-Si:H). Such values demonstrate that pm-Si:H is a very low defect density material which should be able to replace a-Si:H in the field of applications like photovoltaics. (C) 1999 American Institute of Physics. [S0003-6951(99)02747-3].


Published in:
Applied Physics Letters, 75, 21, 3351-3353
Year:
1999
ISSN:
0003-6951
Keywords:
Laboratories:




 Record created 2010-10-05, last modified 2018-01-28


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