GaN evaporation in molecular beam epitaxy environment (vol 74, pg 1854, 1999)
1999
Details
Title
GaN evaporation in molecular beam epitaxy environment (vol 74, pg 1854, 1999)
Author(s)
Grandjean, N. ; Massies, J. ; Semond, F. ; Karpov, S. Y. ; Talalaev, R. A.
Published in
Applied Physics Letters
Volume
75
Issue
19
Pages
3035-3035
Date
1999
ISSN
0003-6951
Laboratories
LASPE
Record Appears in
Scientific production and competences > SB - School of Basic Sciences > IPHYS - Institute of Physics > LASPE - Laboratory of Advanced Semiconductors for Photonics and Electronics
Peer-reviewed publications
Work outside EPFL
Journal Articles
Published
Peer-reviewed publications
Work outside EPFL
Journal Articles
Published
Record creation date
2010-10-05