GaInN GaN multiple-quantum-well light-emitting diodes grown by molecular beam epitaxy

GaInN and GaN were grown by molecular beam epitaxy on c-plane sapphire using NH3. 9 K photoluminescence performed on both GaInN thin layers and GaInN/GaN multiple-quantum wells (MQWs) exhibits narrow emission (similar to 50 meV linewidths). Transmission electron microscopy images show sharp GaInN/GaN interfaces and homogeneous GaInN layers. Strong indium surface segregation is also evidenced. Light-emitting diodes were fabricated from 5 x GaInN (25 Angstrom)/GaN (35 Angstrom) MQW heterostructures. The 300 K electroluminescence yields blue light at 440 nm. (c) 1999 American Institute of Physics. [S0003-6951(99)04124-8].


Published in:
Applied Physics Letters, 74, 24, 3616-3618
Year:
1999
ISSN:
0003-6951
Keywords:
Laboratories:




 Record created 2010-10-05, last modified 2018-03-17


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