000152634 001__ 152634
000152634 005__ 20180317094839.0
000152634 0247_ $$2doi$$a10.1002/(SICI)1521-396X(199911)176:1<219::AID-PSSA219>3.0.CO;2-M
000152634 022__ $$a0031-8965
000152634 037__ $$aARTICLE
000152634 245__ $$aEffects of built-in polarization field on the optical properties of AlGaN/GaN quantum wells
000152634 269__ $$a1999
000152634 260__ $$c1999
000152634 336__ $$aJournal Articles
000152634 520__ $$aAlGaN/GaN quantum well (QW) structures were grown entirely by molecular-beam epitaxy on c-plane sapphire substrates. Reflection high-energy electron diffraction intensity oscillations, which testify a smooth growth front surface at the molecular monolayer scale, were used to precisely measure in situ both the growth rate and the Al content in AlGaN alloys. High-qualily AlGaN/GaN QWs with thicknesses varying from 10 to 80 Angstrom were achieved. Their photoluminescence (PL) linewidth is 10 to 30 meV, and the Stokes shift, determined by temperature-dependent FL, also ranges between 10 to 30 meV. The sample geometry and the Al composition in the barriers were varied in order to assess the built-in electric Grid present in wurtzite nitride-based structures. The magnitude of the deduced electric field points out the role of spontaneous polarization.
000152634 6531_ $$aMOLECULAR-BEAM EPITAXY
000152634 6531_ $$aPIEZOELECTRIC FIELDS
000152634 6531_ $$aGAN
000152634 700__ $$0244550$$aGrandjean, N.$$g161577
000152634 700__ $$aDamilano, B.
000152634 700__ $$aDalmasso, S.
000152634 700__ $$aLeroux, M.
000152634 700__ $$aLaugt, M.
000152634 700__ $$aMassies, J.
000152634 773__ $$j176$$k1$$q219-225$$tPhysica Status Solidi a-Applied Research
000152634 909CO $$ooai:infoscience.tind.io:152634$$particle$$pSB
000152634 909C0 $$0252312$$pLASPE$$xU10946
000152634 937__ $$aEPFL-ARTICLE-152634
000152634 973__ $$aOTHER$$rREVIEWED$$sPUBLISHED
000152634 980__ $$aARTICLE