Strong carrier localization in GaInN/GaN quantum dots grown by molecular beam epitaxy

GaInN/GaN quantum dots (QDs) are grown by molecular beam epitaxy making use of the Stranski-Krastanov growth regime. III Situ scanning tunneling microscopy (STM) evidences the formation of three-dimensional GaInN islands. An island density as high as 10(12) cm(-2)? is deduced from STM images. It is shown that the room-temperature photoluminescence (PL) of GaInN/GaN QDs can be tuned from 3 eV to 2.5 eV by increasing the GaInN thickness from 10 to 30 A. Photothermal deflection spectroscopy is carried out to measure the absorption of GaInN/GaN QDs. For dots emitting at 2.63 eV, a Stokes shift of 250 meV is found between the maximum PL energy and the absorption edge indicating very strong carrier localization.


Published in:
Japanese Journal of Applied Physics Part 2-Letters, 38, 12A, L1357-L1359
Year:
1999
ISSN:
0021-4922
Keywords:
Laboratories:




 Record created 2010-10-05, last modified 2018-03-17


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