000152630 001__ 152630
000152630 005__ 20180317094839.0
000152630 0247_ $$2doi$$a10.1063/1.124567
000152630 022__ $$a0003-6951
000152630 037__ $$aARTICLE
000152630 245__ $$aFrom visible to white light emission by GaN quantum dots on Si(111) substrate
000152630 269__ $$a1999
000152630 260__ $$c1999
000152630 336__ $$aJournal Articles
000152630 520__ $$aGaN quantum dots (QDs) in an AlN matrix have been grown on Si(111) by molecular-beam epitaxy. The growth of GaN deposited at 800 degrees C on AlN has been investigated in situ by reflection high-energy electron diffraction. It is found that a growth interruption performed at GaN thicknesses larger than three molecular monolayers (8 Angstrom) instantaneously leads to the formation of three-dimensional islands. This is used to grow GaN/AlN QDs on Si(111). Depending on their sizes, intense room-temperature photoluminescence is observed from blue to orange. Finally, we demonstrate that stacking of QD planes with properly chosen dot sizes gives rise to white light emission. (C) 1999 American Institute of Physics. [S0003-6951(99)01533-8].
000152630 700__ $$aDamilano, B.
000152630 700__ $$0244550$$aGrandjean, N.$$g161577
000152630 700__ $$aSemond, F.
000152630 700__ $$aMassies, J.
000152630 700__ $$aLeroux, M.
000152630 773__ $$j75$$k7$$q962-964$$tApplied Physics Letters
000152630 909CO $$ooai:infoscience.tind.io:152630$$particle$$pSB
000152630 909C0 $$0252312$$pLASPE$$xU10946
000152630 937__ $$aEPFL-ARTICLE-152630
000152630 973__ $$aOTHER$$rREVIEWED$$sPUBLISHED
000152630 980__ $$aARTICLE